Breaking News
News & Analysis

EE Times' Silicon 60: Hot startups to watch

L to Q
10/4/2012 06:00 PM EDT
31 comments
NO RATINGS
6 saves
< Previous Page 3 / 4 Next >
View Comments: Newest First | Oldest First | Threaded View
<<   <   Page 3 / 3
Peter Clarke
User Rank
Author
re: EE Times' Silicon 60: Hot startups to watch
Peter Clarke   10/8/2012 2:32:27 PM
NO RATINGS
While it is possible to go back to v13.0 and play spot the difference.

GREATTerry
User Rank
Author
re: EE Times' Silicon 60: Hot startups to watch
GREATTerry   10/6/2012 3:35:04 AM
NO RATINGS
I also have interest to know which "dropped" company has now been acquired or moved to IPO. This shows how successful those startups are.

dasgeirsson
User Rank
Author
re: EE Times' Silicon 60: Hot startups to watch
dasgeirsson   10/5/2012 5:37:57 PM
NO RATINGS
It would be interesting to list out the dropped companies, and what happened with each of them!

Azuretex
User Rank
Author
re: EE Times' Silicon 60: Hot startups to watch
Azuretex   10/5/2012 5:00:50 PM
NO RATINGS
Indeed interesting, and I have met a few.

sranje
User Rank
Author
re: EE Times' Silicon 60: Hot startups to watch
sranje   10/5/2012 1:34:13 AM
NO RATINGS
Very interesting - thank you Peter. It seems that Power GaN (3 companies) and 60GHz wireless (3-4 companies) spaces dominate

<<   <   Page 3 / 3
Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed