Breaking News
News & Analysis

Sharp said to be in talks with Intel, Qualcomm

Other investors?
11/14/2012 04:20 PM EST
3 comments
NO RATINGS
< Previous Page 2 / 2
More Related Links
View Comments: Threaded | Newest First | Oldest First
SylvieBarak
User Rank
Blogger
re: Sharp said to be in talks with Intel, Qualcomm
SylvieBarak   11/14/2012 7:15:51 PM
NO RATINGS
Which firm do you feel would be the most beneficial benefactor for Sharp, Junko? Who would make best use of the assets?

junko.yoshida
User Rank
Author
re: Sharp said to be in talks with Intel, Qualcomm
junko.yoshida   11/15/2012 12:08:56 AM
NO RATINGS
Well, none of the companies mentioned in the story as potential investors will be a winner -- unless Sharp gets its act together. There is still a lot of work ahead for Sharp. Even if either Intel or Qualcomm can bring their customers to Sharp as potential buyers of Sharp's small to mid-range panels, that's not an automatic win either for Qualcomm or Intel -- unless Sharp can deliver goods on time, in good quality, in volume and at the price their customers demand.

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed