SAN FRANCISCO--Relentless scaling advances will highlight memory
papers at February's International Solid State Circuits Conference
here, but it may be break-throughs in off-beat memory architectures
that raise a few eyebrows.
ISSCC, scheduled for Feb. 17-21, 2013 at the Marriott, features a
slightly smaller percentage of memory papers than usual for the
five-day affair (9 percent of the total is down from 10 percent this
year and 10 pecent in 2011), but the topics are no less fascinating.
Memory subcommittee chair Kevin Zhang of Intel notes in his memory
overview, "We continue to see progressive scaling in embedded SRAM,
DRAM, and floating-gate based Flash for very broad applications.
However, due to the major scaling challenges in all mainstream
memory technologies, we see a continued increase in the use of smart
algorithms and error-correction techniques to compensate for
Memory capacity trend of emerging nonvolatile memories
However, "Emerging memory technologies are making steady progress
towards product introductions, including PCRAM and ReRAM, while
STT-MRAM is beginning to become a strong candidate for both
standalone and embedded applications."
One of the standout papers for the memory sessions comes from
Toshiba and Sandisk, who will describe a 32Gb ReRAM (Resistive
random-access memory) test chip developed in 24nm process, with a
diode as the selection device.
The allure of alternative non-volatile memories has been high
cycling capability and lower power per bit in read/write but their
densities don't compete with NAND flash. ISSCC organizers noted that
the highest density for a single chip published at last yearís ISSCC
is 64Mb for ReRAM and 8Gb for PRAM, while NAND can reach up to
The Sandisk-Toshiba test chip is a metal-oxide-based ReRAM is based
on 24nm technology node with a diode as the selection device and a
2-layered architecture. Apparently as part of the stacking, a number of
circuits are tucked under the array, including the selection
transistor or decoder, bias-control circuit,
sense amplifier, page buffer, read/write control circuit and voltage
regulator drivers, improving the array efficiency, according to a
preview of the paper.