Intel's paper laid out characteristics of Intel’s 22-nm process variation for SoCs (see chart below). It outperforms Intel’s 32-nm planar process by 20 to 65 percent and covers four orders of magnitude in leakage current, said co-author C.H. Jan.
The process provides 51 to 56 percent improvements in high voltage performance used for fast interfaces such Ethernet, HDMI and PCI Express. That’s more than twice the 20 percent boost typical in this area for a new Intel node, Jan said.
In addition, analog performance went up three-fold after declines in the past three nodes. Intel offers a small library of analog circuits tailored to the process including precision resistors, metal-in-metal capacitors and high Q inductors.
The process supports high and standard performance options as well as low and ultra low power ones. It also includes SRAM designs optimized for density, power and performance some of which now hit 2.6 GHz at 1V, up from 1.8 GHz at 32 nm.
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