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Slideshow: IBM outlines fab future beyond FinFETs

2/12/2013 02:45 PM EST
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GroovyGeek
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re: Slideshow: IBM outlines fab future beyond FinFETs
GroovyGeek   2/13/2013 4:39:08 AM
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IBM has been mostly irrelevant to semiconductor process technology for at least a decade. I doubt many outside IBM can clear state why they even still do it. They certainly don't make any money from it. Yerning for the glory days perhaps?

help.fulguy
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re: Slideshow: IBM outlines fab future beyond FinFETs
help.fulguy   2/13/2013 3:02:03 AM
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Meanwhile Intel is laughing at these 3 bumbling idiots. They tried Gate First and lost. They keep losing. They keep talking new tech, while Intel will release the new technology.

resistion
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re: Slideshow: IBM outlines fab future beyond FinFETs
resistion   2/12/2013 11:52:45 PM
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So the difficulties are the source power also has to continually increase, and the resist outgassing increases.

resistion
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re: Slideshow: IBM outlines fab future beyond FinFETs
resistion   2/12/2013 11:47:12 PM
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The Rayleigh formula only has meaning if there are enough photons for defining the feature. EUV doesn't have enough, so the target dose continually increases as feature size shrinks.

Alex33
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re: Slideshow: IBM outlines fab future beyond FinFETs
Alex33   2/12/2013 8:23:05 PM
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That is the length of the whole unit cell. There are more atoms within the cell since it is a diamond crystal structure. Actual figures depend on orientation but for a 100 direction it would be 4x that.

Yog-Sothoth
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re: Slideshow: IBM outlines fab future beyond FinFETs
Yog-Sothoth   2/12/2013 7:32:14 PM
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The lattice constant of Si is about 5.4 angstroms so 70/5.4 = 13 atoms of silicon...

krisi
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re: Slideshow: IBM outlines fab future beyond FinFETs
krisi   2/12/2013 6:15:31 PM
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Patterning at 7nm is obviously tough but sounds people think it can be done...but is Mosfet still working at 7nm?...what is Ion/Ioff ratio?...how many dopant atoms are within transistor volume? what about statistical variations that could be huge?

rick merritt
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re: Slideshow: IBM outlines fab future beyond FinFETs
rick merritt   2/12/2013 5:35:41 PM
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I neglected to add this significant quote from Gary Patton: "At 7 nm you have no choice and have to go to triple or quad patterning, and I expect some of that will creep in at 10 nm as well."

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