Breaking News
News & Analysis

EE Times 40th Anniversary: From 3-D chips to cognitive computing

11/5/2012 09:22 PM EST
2 comments
NO RATINGS
Page 1 / 10 Next >
View Comments: Oldest First | Newest First | Threaded View
docdivakar
User Rank
Author
re: EE Times 40th Anniversary: From 3-D chips to cognitive computing
docdivakar   1/2/2013 5:59:12 PM
NO RATINGS
Nice list... how ever, I object to your statement that "3-D chips are one of those perennially "almost there" technologies..."; they are here NOW! Samsung already introduced a 8Gb version of RDRAM with TSV's. You can expect more product announcements in 2013. Graphene, on the other hand is REALLY the 3-D chips are one of those perennially "almost there" technologies! As to its heat spreading capabilities, there are circuit board technologies available today that use carbon composites for better thermal management (Stablecore for example). MP Divakar

docdivakar
User Rank
Author
re: EE Times 40th Anniversary: From 3-D chips to cognitive computing
docdivakar   1/2/2013 6:00:12 PM
NO RATINGS
Sorry... guilty of cut & paste... the second para should read: Graphene, on the other hand is REALLY one of those perennially "almost there" technologies! As to its heat spreading...

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed