Breaking News
Research

Intel's Gargini sees tunnel FET as transistor option

3/1/2011 05:10 PM EST
7 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
Timetraveler
User Rank
Rookie
re: Intel's Gargini sees tunnel FET as transistor option
Timetraveler   3/4/2011 5:14:51 PM
NO RATINGS
Yes, it will. Vt is related to bandgap, Si~1.1V, Ge ~0.67V, InAs~0.38V

yalanand
User Rank
Rookie
re: Intel's Gargini sees tunnel FET as transistor option
yalanand   3/2/2011 1:36:10 PM
NO RATINGS
If we use germanium in the channel as an intermediate or alternative step to introducing indium arsenide how exactly does it help us to improve the performance. Will it reduce the Vt ?

helenchrish@aol.com
User Rank
Rookie
re: Intel's Gargini sees tunnel FET as transistor option
helenchrish@aol.com   3/2/2011 12:07:50 PM
NO RATINGS
i am totally agree with your post, thanx for this information. http://www.cellhub.com/t-mobile-cell-phones/samsung-galaxy-s-4g-black.html Samsung Galaxy S 4G

goafrit
User Rank
Manager
re: Intel's Gargini sees tunnel FET as transistor option
goafrit   3/1/2011 6:48:00 PM
NO RATINGS
Absolute - That is a huge possibility in the roadmap. Intel continues to lead this effort to add more capabilities, reduce cost and manage power.

Flash Poll
Radio
LATEST ARCHIVED BROADCAST
EE Times editor Junko Yoshida grills two executives --Rick Walker, senior product marketing manager for IoT and home automation for CSR, and Jim Reich, CTO and co-founder at Palatehome.
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Top Comments of the Week