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Intel's Gargini sees tunnel FET as transistor option

3/1/2011 05:10 PM EST
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Timetraveler
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re: Intel's Gargini sees tunnel FET as transistor option
Timetraveler   3/4/2011 5:14:51 PM
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Yes, it will. Vt is related to bandgap, Si~1.1V, Ge ~0.67V, InAs~0.38V

yalanand
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re: Intel's Gargini sees tunnel FET as transistor option
yalanand   3/2/2011 1:36:10 PM
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If we use germanium in the channel as an intermediate or alternative step to introducing indium arsenide how exactly does it help us to improve the performance. Will it reduce the Vt ?

helenchrish@aol.com
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re: Intel's Gargini sees tunnel FET as transistor option
helenchrish@aol.com   3/2/2011 12:07:50 PM
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i am totally agree with your post, thanx for this information. http://www.cellhub.com/t-mobile-cell-phones/samsung-galaxy-s-4g-black.html Samsung Galaxy S 4G

goafrit
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re: Intel's Gargini sees tunnel FET as transistor option
goafrit   3/1/2011 6:48:00 PM
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Absolute - That is a huge possibility in the roadmap. Intel continues to lead this effort to add more capabilities, reduce cost and manage power.

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