LONDON – Claiming that test chip results have proved the scalability of its two-transistor antifuse memory element, Kilopass Technology Inc. has announced it is working with Taiwan Semiconductor Manufacturing Co. Ltd. on the 28-nm CMOS node.
Kilopass (Santa Clara, Calif.) said the first test chip silicon on TSMC's 28-nm High-K Metal Gate (HKMG) process shows the 2-T bit cell performs well on 28HKMG, scaling in area and power with the process, and can scale to 22-nm and beyond.
"The test chip silicon contained a variety of 2-T bit cells for fundamental device study and cell modeling. Silicon results show that Kilopass' 2T technology in HKMG has excellent programming distribution and no program disturb behavior is observed," said Harry Luan, CTO at Kilopass, in a statement. "In addition, the gate leakage is significantly reduced from previous process generations which will contribute to a better read margin and high incoming yield."
Kilopass's antifuse embedded non-volatile memory is implemented in standard CMOS without any additional backend process steps. Over 2 billion ICs including antifuse technology have shipped, Kilopass said. These have been manufactured on process technologies ranging from 180- to 40-nm and gone to applications in consumer, automotive, mobile, and analog and mixed-signal products.
Kilopass makes the nonvolatile memory available as XPM and Gusto memory IP. For the 28-nm HKMG process it is expected to be available for licensing in the second half of 2011.
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