Intel Corp. today unveiled its third generation of flash memory products, the 3-volt Synchronous StrataFlash product line, which is targeted at cell phones, PDAs, and other wireless devices.
Based on 0.18-micron process technology, the NOR-based chips have a fast-read feature that allows a software application to execute code directly out of flash, rather than downloading to a device's random access memory for execution, according to Greg Matson, Intel's StrataFlash marketing manager. The design reduces cost by eliminating redundant system memory and board space, Matson said.
The technology increases fast-read speeds by adding a 66MHz burst mode, "so throughput gives you 92 Mbytes per second, versus the 22Mbytes per second on standard synchronous flash," Matson said.
Intel's first two generations of StrataFlash products were asynchronous-only parts based on 0.25-micron technology and ranging in densities from 32 to 128Mbits. Introduced in 1997, StrataFlash products use a multi-level cell architecture designed for code execution and data storage.