NEC Electronics Corp. Tuesday announced the firm is sampling a 130-nanometer
(0.13-micron) embedded DRAM core with 314MHz access speed.
The core operates at 1.2V with one clock latency, and is available in 8Mbit and
9Mbit configurable macros, NEC said.
The NEC chip subsidiary, based in Kawasaki, Japan, said the new embedded DRAM is
slated for system-on-a-chip applications for 10Gbit/sec and 40Gbit/sec edge
routers and core routers, storage servers, cache memory and high-performance
Takatoshi Koga, general manager of custom LSI division No. 2, said the 130nm
design rules provided a memory core with the density of DRAMs combined with
Separately, the parent NEC Corp. said researchers had developed a nitride power
transistor capable of 2.3-watt power amplification in the sub-millimeter 30GHz
frequency range. The transistor has 0.25-micron gate electrodes using
heterojunctions of gallium nitride and aluminum gallium nitride, according to the company. It has a
maximum output power of 2.3W. NEC said the bias voltage of 30V is four to five
times higher than conventional gallium arsenide transistors.