Toshiba Corp. Friday said it developed an embedded DRAM cell on silicon-on-insulator (SOI) wafers. Mass production of the system-on-chips (SoCs) that will result from the innovation is expected to begin in 2006 and will be aimed at broadband network applications, Toshiba said.
The chipmaker said SOI enables faster embedded DRAM processing speed, compared to memory cores on conventional bulk silicon wafers.
Toshiba fabricated a 96Kbit embedded DRAM cell, developing a new DRAM memory cell technology that uses of the characteristics of the SOI wafer itself to store data. The new memory cell technology, known as a floating body cell (FBC), eliminates the need for
capacitors by storing the electric charge in the FBC transistors. Since the transistor works as both capacitor and electric switch, the cell area is half that of a conventional DRAM cell, according to Toshiba.
The technology will be used for embedded DRAM SoCs for 45nm-generation products, the company said.