Renesas Technology and Matsushita Electric Industrial Co. Friday announced that they have jointly developed a 32Kbyte on-chip SRAM for microcontrollers and SoCs using 90nm process technology.
The prototype on-die SRAM operates on 1.2V and achieves a standby leakage current of 1.2 microamps. The partners claimed this is l/13th the power level of existing on-die SRAMs.
The prototype memory cell is 1.25 sq. microns, which the companies said is 40% smaller than on-die SRAMs made with 0.13-micron processing.
Renesas Technology is the joint venture chip operation of Hitachi Ltd. and Mitsubishi Electric Corp.