DANVERS, Mass.--Ibis Technology Corp. here today announced it plans to increase production of silicon-on-insulator (SOI) wafers by 150% with the addition of three new implanters during the first quarter 2000.
The company said it will manufacture three new Ibis 1000 implanters for Separation by Implantation of Oxygen SOI (SIMOX-SOI), and it will hire 40 engineers and technical personnel to expand wafer production in a new class 10 cleanroom facility over the next nine months.
SIMOX-SOI wafers promise to increase the speed of logic, reduce power consumption, and extend operation over high-temperature ranges compared to conventional silicon substrates or epitaxial wafers. A number of major chip makers--in particular IBM Corp.--have announced plans to use SOI wafers in high-volume, commercial ICs.
"This expansion demonstrates Ibis Technology's commitment to meeting our customers' technology requirements, both now and in the future," said Martin Reid, president and CEO of the Danvers company. "Designed to unify the operations and augment the company's existing manufacturing facilities in response to the growing demand for SIMOX-SOI wafers, we are making the key capital expenditures requisite to ramp manufacturing capacity in order to serve the global SIMOX-SOI market."