Chelmsford, MA — Hittite Microwave Corporation has introduced four GaAs pHEMT/HEMT MMIC low noise amplifiers (LNAs) which are ideal for microwave and millimeterwave radio, VSAT, military/space, test instrumentation and sensor applications from 1 to 36 GHz.
The HMC263LP4E and the HMC566LP4E are GaAs pHEMT MMIC low noise amplifiers which are rated from 24 to 36 GHz, and 28 to 36 GHz respectively. These LNAs have been designed to provide noise figure as low as 2.2 dB with up to 21 dB of small signal gain, and +24 dBm output IP3 from a single supply of +3/+5 V. Both these devices also exhibit high dynamic range and excellent input and output return losses, making them ideal for millimeterwave system receivers.
Ideal for high capacity microwave radios or VSAT applications, the HMC753LP4E is a GaAs HEMT MMIC LNA which operates from 1 to 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm. P1 dB output power of up to +18 dBm allows the device to function as a LO driver for Hittite's wide range of balanced, I/Q or image reject mixers.
The HMC263LP4E, HMC566LP4E and the HMC753LP4E are housed in RoHS compliant 4x4 mm QFN SMT packages, and feature I/Os that are DC blocked and internally matched to 50 Ohms, which facilitates easy integration into Multi-Chip-Modules (MCMs).
The HMC-C059 is GaAs MMIC pHEMT low noise distributed amplifier which operates between 1 and 12 GHz, and is housed in a miniature, hermetic module with replaceable SMA connectors. The HMC-C059 features 1.8 dB noise figure, 16 dB of small signal gain, and up to +17 dBm of output power at 1 dB gain compression, providing optimal performance for military, microwave radio, and test instrumentation applications.
Samples and evaluation PC boards for all SMT packaged products are available.
For further information visit www.hittite.com.