Tokyo, Japan -- Matsushita Electric Industrial Co., Ltd. announced the development of a new AlGaN/GaN power FET transistor to revolutionize switching devices.
The new transistor can be used as a low-loss power switching device in applications like inverters for home electric appliances, hybrid cars and switching power supplies. The transistor uses Panasonic's own crystal growing technology and GaN materials that have over 10 times the breakdown voltage and below 1/5 lower resistance of existing silicon (Si).
One of these new transistors can substitute more than 10 parallel-connecting Si power MOSFETs, contributing significantly to power savings and miniaturization of electronic products. By adopting silicon substrates, the material cost is drastically reduced to less than 1/100 of silicon carbide (SiC) power MOSFETs.
The new AlGaN/GaN power FET is the result of development of Panasonic's source-via-grounding (SVG) structure technology where the transistor source electrode is connected to the Si substrate through holes formed on the surface side. This eliminates source wires, bonding and pads from the substrate surface. Consequently, the chip size and wire inductance are significantly reduced.
Panasonic has developed the GaN growth technology in partnership with Professor Takashi Egawa of the Research Center for Nano-Device and System, Nagoya Institute of Technology. The new technology has been vital in making the new high power AlGaN/GaN FET.
Matsushita Electric Industrial Co (www.panasonic.com) has applied for 39 patents in Japan and 26 patents overseas on the new transistor. The results of this development will be presented at the International Electron Devices Meeting (IEDM) 2004 held in San Francisco from December 13 to 15, 2004.