LONDON – Samsung Electronics Co. Ltd. has said it is now producing 64-Gbit NAND flash memory with three bits per memory cell on a 20-nm class process. The memory chip is suitable for use in USB flash drives and secure digital memory cards.
Samsung claimed it had introduced a "20nm-class" 32-Gbit multilevel cell NAND flash memory in April 2010, although this led to speculation that the company was coining the phrase to try and make a 27-nm process appear on a par with 26-, 25- and 24-nm process claims from its rivals. In August Toshiba Corp. announced that is has started mass production of 64-Gbit NAND flash memories using a 24-nm CMOS manufacturing process technology and thereby taken the lead in geometry and NAND flash density.
An alternative view is that as process geometry shrinks below 30-nm measurements of gate length and metal pitch become variable; even line edge roughness can make a difference. Samsung and others are starting to refer to the 3X generation as a node with critical dimensions somewhere between 30- and 40-nm. Similarly the 2X-node or 20-nm class refers to a process with critical dimensions between 20-nm and 30-nm.
Samsung's 20nm-class, 64-Gbit NAND flash memory has a 60 percent higher productivity level than Samsung's existing 30nm-class, 32-Gbit NAND. The device also offers improved performance by applying the Toggle DDR 1.0 specification, a step up from the Single Data Rate data transmission of the 30nm-class NAND chips.
The availability 8-Gbytes of storage in a single chip will trigger the acceptance of Toggle DDR-based high-performance flash in a variety of applications include smartphones, Samsung said.
"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32-Gbit 3-bit NAND flash last November," said Seijin Kim, vice president of flash memory planning at Samsung, in a statement. "By now entering into full production of 20nm-class 64Gbit 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."
"The memory chip is suitable for use in USB flash drives and secure digital memory cards." Got it, thks. Still, electron splitting at this level is hard to do, wonder if the extra control logic is starting to take too much area.
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