LONDON – Hynix Semiconductor Inc. has announced that it has developed a 2-Gbit DDR4 DRAM IC and 2-Gbyte memory module based on the IC. The IC has been implanted using a 30-nm class (somewhere between 30 and 39-nm) manufacturing process technology.
The module includes error check and correction (ECC) and is to the small outline dual-in-line memory module (SODIMM) format. It is intended for use in small server computer. Hynix said it plans to start volume production of this DDR4 product in the second half of 2012.
Hynix claimed that the 2,400-Mbits per second achievable by the memory IC is the fastest yet demonstrated, beating the 2,133-Mbps at 1.2-V claimed by rival memory maker Samsung Electronics Co. Ltd. It is also 80 percent faster than Hynix's own DDR3 1,333-Mbps product. The DDR4 DRAM standard should allow lower power consumption while doubling the rate at which data is transferred from the DDR3 standard.
The Hynix DDR4 memory module product operates at voltages down to 1.2-V and processes up to 19.2-Gbytes of data per second with a 64-bit I/O, Hynix said.
"With this product, Hynix will be able to provide premium solutions to our customers not only in the PC and server but also in the tablet market," said Ji-Bum Kim, chief marketing officer of Hynix, in a statement.
DDR4 DRAM is expected to increase from 5 percent of the market in 2013 to over 50 percent in 2015, Hynix said referencing market research firm, IHS-iSuppli. Demand for DDR3 DRAM is expected to reach its peak in 2012 with 71 percent of the market and then decrease to 49 percent of the market in 2014.
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