LONDON – Japan's Elpida Memory Inc. has developed what it claims is the industry's first DRAM made using a 25-nm manufacturing process.
The EDJ2104BFSE/EDJ2108BFSE is a 2-Git DDR3 synchronous DRAM that requires 30 percent less cell area per bit compared with Elpida's 30nm process. It also saves power compared with the Elpida's 30nm process products by using 15 percent less operating current and 20 percent less current when on standby, Elpida said.
The 25-nm 2-Gbit DDR3 SDRAM can supports 1,866-Mbit per second transfers at 1.5-V operation and is compliant with 1.35-V operation with transfers at 1,600-Mbits per second. The part comes in 4-bit wide and 8-bit wide configurations and is rated for operation over a range from 0 to 90 degrees centigrade.
Elpida said both sampling and volume production of the 25-nm 2-Gbit DDR3 DRAM are expected to begin in July 2011.
By the end of 2011 Elpida plans to begin volume production of 4-Gbit DDR3 SDRAM products using the 25-nm process. In addition, the new 25nm process will be used to support further development of Mobile RAM, Elpida's mainstay memory product.