LONDON – Elpida Memory Inc. has said it has completed development of the industry's first 25-nm process 4-Gbit DDR3 synchronous DRAM. The company claims the part is also the smallest 4-Gbit DRAM yet produced.
Compared with previous generation 30-nm DDR3 DRAMs of the same capacity the 4-Gbit memory reduces operating current by about 25 to 30 percent and standby current by about 30 to 50 percent. The device is expected to find applications in PCs and servers, tablet and ultra-thin notebook computers, Elpida said.
Sample shipment and mass production of the 25-nm 4-Gbit DDR3 SDRAM is expected to start by the end of 2011.
The DRAM has two part numbers EDJ4104BCBG / EDJ4108BCBG representing the by 4-bit and by 8-bit data width organizations. The per-pin data rate is 1866-Mbps and higher. The operating voltage is 1.5-volts and 1.35-volts low power option with an operating temperature range of 0 to 95 degree C.
Join our online Radio Show on Friday 11th July starting at 2:00pm Eastern, when EETimes editor of all things fun and interesting, Max Maxfield, and embedded systems expert, Jack Ganssle, will debate as to just what is, and is not, and embedded system.