LONDON – Elpida Memory Inc. has said it has completed development of the industry's first 25-nm process 4-Gbit DDR3 synchronous DRAM. The company claims the part is also the smallest 4-Gbit DRAM yet produced.
Elpida finished development of a 2-Gbit DDR3 SDRAM using the 25nm process in May and began sample shipments in July (see Elpida claims it is first with 25-nm DRAM).
Compared with previous generation 30-nm DDR3 DRAMs of the same capacity the 4-Gbit memory reduces operating current by about 25 to 30 percent and standby current by about 30 to 50 percent. The device is expected to find applications in PCs and servers, tablet and ultra-thin notebook computers, Elpida said.
Sample shipment and mass production of the 25-nm 4-Gbit DDR3 SDRAM is expected to start by the end of 2011.
The DRAM has two part numbers EDJ4104BCBG / EDJ4108BCBG representing the by 4-bit and by 8-bit data width organizations. The per-pin data rate is 1866-Mbps and higher. The operating voltage is 1.5-volts and 1.35-volts low power option with an operating temperature range of 0 to 95 degree C.
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