LONDON – Renesas Electronics has said it has developed a 40-nm embedded flash memory intellectual property for implementation at 40-nm and use in automotive applications.
The company said the technology would be included in automotive microcontrollers and be available as samples from Renesas in the second-half of 2012.
The technology offers 20 years of data retention and progam-erase endurance of 125,000 cycles, Renesas said. In addition the memory can be read at up to 170 degrees C junction temperature and supports read speed clocking at up to 120-MHz. The memory is based on MONOS (metal oxide nitride oxide silicon) technology.