LONDON – Power transistor startup Transphorm Inc. (Goleta, Calif.) has produced gallium-nitride on silicon components with a breakdown voltage of 600-V.
The company had previously announced a range of GaN power diodes. The company has added more diodes and power transistors to its range. The breakdown voltage of 600-V means that the improved power efficiency of GaN can be applied to applications that operate direct from mains electricity.
Transphorm, founded in 2007, has demonstrated dc-dc boost converter power supply board with 99 percent efficiency and a three-phase motor drive board with 98.5 percent efficiency at the PCIM 2012 exhibition in Nuremburg, Germany. The company said the Tru-Sine motor drive provides between 2 and 8 percent higher efficiency at 100-kHz switching frequency compared with best IGBT-based motor drives at 15-kHz.
The company announced its first GaN-on-Si products – power transistors, diodes and modules at a lower breakdown voltage – in 2011.
The following 600-V breakdown products are available for sale as evaluation samples through the Transphorm website but only to "approved" customers:
The TPS30xxPK series GaN diode with 2, 4, and 6-amp current, in a TO-220 package
TPH3006PS 180 mohm GaN transistor in TO-220 package
TPT3044M three-phase GaN module and related inverter application board TDMD2000E0I
"In the motor segment alone, Transphorm's innovations create the potential to save 2.5 percent of U.S. electricity generation through enhanced electro-mechanical efficiency of the full drive and motor system – equivalent to the energy saving potential of replacing incandescent lighting with white LEDs," said Umesh Mishra, CEO of Transphorm, in a statement.
"Our team continues to expand its lead in high voltage GaN, with a broad portfolio of transistors, diodes and modules now possible on low cost silicon substrate platform," said Primit Parikh, president of Transphorm, in the same statement.
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Very little exciting, actually and nothing new - only a skilful PR.
Most importantly the word TRANSISTOR was never mentioned.
In summary - same stuff already previously shown - a diode and SiC only - NO GaN-on-Si transistor
The ever-presented current collapse problem is very difficult to control and solve at higher voltages.
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