LONDON – Power transistor startup Transphorm Inc. (Goleta, Calif.) has produced gallium-nitride on silicon components with a breakdown voltage of 600-V.
The company had previously announced a range of GaN power diodes. The company has added more diodes and power transistors to its range. The breakdown voltage of 600-V means that the improved power efficiency of GaN can be applied to applications that operate direct from mains electricity.
Transphorm, founded in 2007, has demonstrated dc-dc boost converter power supply board with 99 percent efficiency and a three-phase motor drive board with 98.5 percent efficiency at the PCIM 2012 exhibition in Nuremburg, Germany. The company said the Tru-Sine motor drive provides between 2 and 8 percent higher efficiency at 100-kHz switching frequency compared with best IGBT-based motor drives at 15-kHz.
The company announced its first GaN-on-Si products – power transistors, diodes and modules at a lower breakdown voltage – in 2011.
The following 600-V breakdown products are available for sale as evaluation samples through the Transphorm website but only to "approved" customers:
The TPS30xxPK series GaN diode with 2, 4, and 6-amp current, in a TO-220 package
TPH3006PS 180 mohm GaN transistor in TO-220 package
TPT3044M three-phase GaN module and related inverter application board TDMD2000E0I
"In the motor segment alone, Transphorm's innovations create the potential to save 2.5 percent of U.S. electricity generation through enhanced electro-mechanical efficiency of the full drive and motor system – equivalent to the energy saving potential of replacing incandescent lighting with white LEDs," said Umesh Mishra, CEO of Transphorm, in a statement.
"Our team continues to expand its lead in high voltage GaN, with a broad portfolio of transistors, diodes and modules now possible on low cost silicon substrate platform," said Primit Parikh, president of Transphorm, in the same statement.
Very little exciting, actually and nothing new - only a skilful PR.
Most importantly the word TRANSISTOR was never mentioned.
In summary - same stuff already previously shown - a diode and SiC only - NO GaN-on-Si transistor
The ever-presented current collapse problem is very difficult to control and solve at higher voltages.
I didn't break the law but I was accountable.
UCSB Mafia continues to break the law but is not accountable.
UCSB Mafia subjected me to a four-year hostile work environment where I was defamed, threatened, assaulted and bullied by a brain-damaged hostile coworker with the knowledge and support of our staff and faculty supervisors including Umesh Mishra.
After blowing the whistle on UCSB criminal discrimination against American Citizens for staff and student intern positions, I was mobbed, terminated and later rendered unemployable by UCSB Mafia's criminal sabotage of my acquisition of employment which is a form of attempted murder.
At the direction of UCSB Mafia, I was arrested on the false trumped up charge of "threats to bomb or injure property" when court records document that I was actually arrested for "threatening to accuse UCSB of crimes" and "threatening to incite a strike at UCSB." I neither "threatened" to accuse nor incite; I DID accuse and I DID incite. Both legal.
At the direction of UCSB Mafia, I was jailed for ten days as a political prisoner.
At the direction of UCSB Mafia, I was involuntarily committed (Soviet Style) for twelve days as a political dissident before my release after three psychiatrists unanimously concluded I had no mental illness, no personality disorders and required no medication.
At the direction of UCSB Mafia, court proceedings were dragged out for 10 months in unsuccessful attempt to impoverish me into accepting a plea bargain before they finally dismissed bogus charges days before the scheduled trial because they would lose and be exposed in court as unaccountable criminal thugs.