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Universal memory, round two

11/8/2009 05:00 AM EST
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Semiconductor Analyst
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re: Universal memory, round two
Semiconductor Analyst   11/10/2009 1:32:38 PM
I would not bet against NAND for the foreseeable future. So while lithographic scaling will be a problem sub 32 nm, that problem is faced by everyone. And yes it will be hard to scale the interpoly dielectric and tunnel oxides. But HfO or AlO are being used in DRAMs and microprocessors. And Samsung and Toshiba have been qute clever at migrating to 2, 3, and 4 bits per cell. That and multichip packaging (I think one vendor has shown 9 dies in a stack) would suggest that flash has a way to go before bust. I don't see any of the other memory technologies as having the kind of infrastructure that flash and DRAM have. The reports of flash/DRAM deaths are quite premature.

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