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The evolution of phase-change memory

7/26/2010 10:38 PM EDT
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olearydq
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re: The evolution of phase-change memory
olearydq   7/10/2012 3:48:34 PM
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Figure 2 appears to contain errors in the "Properties" column. The amorphous phase should exhibit low reflectivity and high resistance The polycrystalline phase should exhibit high reflectivity and low resistance. The text and caption state this also. Regards, Daniel O'Leary Fort Worth TX.

unknown multiplier
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re: The evolution of phase-change memory
unknown multiplier   8/3/2010 8:28:50 AM
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They cannot be doing block writes, only individual cells.

Helicopter
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re: The evolution of phase-change memory
Helicopter   8/3/2010 5:33:00 AM
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I thought PCM write speed is less than 10MBps... But if the argument is PCM write speed is 100MBps, then NOR could also be architected to achieve the same.

photo recovery
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re: The evolution of phase-change memory
photo recovery   7/30/2010 8:35:54 AM
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The technology is indeed a productivity booster, and there are easy solutions to privacy issues. Phase-change memory blends the attributes commonly associated with NOR-type flash memory, Regards, Data Recovery Software http://www.datadoctor.biz

ahshabazz
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re: The evolution of phase-change memory
ahshabazz   7/30/2010 6:44:01 AM
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Our memories dont rely on electronics our memories use dark energy - :}

patrick.mannion
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re: The evolution of phase-change memory
patrick.mannion   7/29/2010 8:28:29 PM
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Hi again. The article was originally submitted by Numonyx prior to the finalization of the acquisition. It entered the queue here (we get a lot of submissions). When it came time to post it, the acquistion had closed and we sent the article back for revision, with Micron. The version you see now, is the version Micron sent back to us.

Volatile Memory
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re: The evolution of phase-change memory
Volatile Memory   7/28/2010 5:08:29 AM
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patrick.mannion: Why should we take it easy on Mr. Atwood? He is ruining Micron's reputation. The article, as published, leaves the false impression that Micron will engage in the same phase-change memory scam that Numonyx/STM/Intel have been perpetrating for years. Mr. Atwood managed to fool at least one member of the EETimes team, Mr. Peter Clarke, who after reading Mr. Atwood's outdated article, concluded that "Micron ... has indicated that it intends to back the phase-change memory technology" - clearly an unwarranted conclusion, if the article was submitted prior to the closing of the acquisition!

patrick.mannion
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re: The evolution of phase-change memory
patrick.mannion   7/28/2010 3:16:13 AM
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Hey all, let's take it easy on Greg here. This was simply a typo. The article was originally submitted to EETimes shortly before Micron sealed the deal on its purchase of Numonyx. (Yes, Numonyx was formed through a joint venture between ST and Intel in 2008.) In the revised version sent to EETimes shortly after the deal was sealed and right before article posted, a global substitution of 'Micron' for 'Numonyx' had been implemented, which caused the error. I should have caught it, for sure, but these things happen. I have now fixed it. Thanks for spotting this, guys! Much appreciated, as always.

zman_tekinsil
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re: The evolution of phase-change memory
zman_tekinsil   7/28/2010 1:02:54 AM
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Meant Joint Venture between Intel and ST. Sorry!

zman_tekinsil
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re: The evolution of phase-change memory
zman_tekinsil   7/28/2010 1:02:00 AM
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Deception continues. Mr Atwood did not joint Numonyx. He was with Numonyx all the time, from inception. Numonyx was joint venture between Intel and Microm, mainly.

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