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The evolution of phase-change memory

7/26/2010 10:38 PM EDT
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greenpattern
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re: The evolution of phase-change memory
greenpattern   7/27/2010 2:53:35 AM
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"In 2008, ST and Intel combined their NOR, NAND (ST's NAND), and PCM business to form a new flash company called Micron. The formation of Micron has further accelerated progress in the development of PCM resulting in the first commercial PCM product at the end of 2008." You mean Numonyx, right?

unknown multiplier
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re: The evolution of phase-change memory
unknown multiplier   7/27/2010 3:08:21 AM
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The phase change material interaction with nitride or other materials is nontrivial, especially when current density heating (which moves atoms) is needed to activate the mechanism.

Volatile Memory
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re: The evolution of phase-change memory
Volatile Memory   7/27/2010 3:54:22 PM
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Incredible! Mr. Atwood claims that phase-change memory writes at 100 MB/s, yet the datasheet of Numonyx (now Micron) own PCM Omneo chip shows that it writes at less than 1 MB/s. When will the lies stop?

unknown multiplier
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re: The evolution of phase-change memory
unknown multiplier   7/27/2010 4:55:44 PM
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Phase change memory really compares unfavorably with spin torque MRAM and ReRAM in performance and compares unfavorably with Flash and ReRAM in cost. So ReRAM (or some call it RRAM) will eat PCM's lunch.

tipotech
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re: The evolution of phase-change memory
tipotech   7/27/2010 5:33:21 PM
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Looks very interesting , but from what i see Samsung will beat Micron to the market with PCM. Samsung has stated it will introduce PCM in Mobile Handset first. Good Luck Micron

Volatile Memory
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re: The evolution of phase-change memory
Volatile Memory   7/27/2010 11:41:25 PM
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Samsung lied. Samsung's press release promised that the introduction in mobile handsets will happen by June 30th. Never happened. No product on the market uses any phase-change memory, for obvious reasons. Samsung and Numonyx have both lied repeatedly about the status of their phase-change programs.

JAK620
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re: The evolution of phase-change memory
JAK620   7/27/2010 7:44:42 PM
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Hey you wrote this whole article about the background environment and history of PCM. I would expect that you know about "Micron". Stating that Intel formed Micron in 2008 is the most ridiculous false statement I have ever seen on EETimes

JAK620
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re: The evolution of phase-change memory
JAK620   7/27/2010 7:59:27 PM
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"Greg Atwood is a senior fellow at Micron Technology, Inc. He received a M.S. degree in physics from Purdue University in 1979, joining Intel Corporation in the same year. " And you wrote "In 2008, ST and Intel combined their NOR, NAND (ST's NAND), and PCM business to form a new flash company called Micron."? Wow. This is supposed to be a professional web site for the industry. and you work for Micron?

zman_tekinsil
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re: The evolution of phase-change memory
zman_tekinsil   7/28/2010 1:02:00 AM
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Deception continues. Mr Atwood did not joint Numonyx. He was with Numonyx all the time, from inception. Numonyx was joint venture between Intel and Microm, mainly.

zman_tekinsil
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re: The evolution of phase-change memory
zman_tekinsil   7/28/2010 1:02:54 AM
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Meant Joint Venture between Intel and ST. Sorry!

patrick.mannion
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re: The evolution of phase-change memory
patrick.mannion   7/28/2010 3:16:13 AM
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Hey all, let's take it easy on Greg here. This was simply a typo. The article was originally submitted to EETimes shortly before Micron sealed the deal on its purchase of Numonyx. (Yes, Numonyx was formed through a joint venture between ST and Intel in 2008.) In the revised version sent to EETimes shortly after the deal was sealed and right before article posted, a global substitution of 'Micron' for 'Numonyx' had been implemented, which caused the error. I should have caught it, for sure, but these things happen. I have now fixed it. Thanks for spotting this, guys! Much appreciated, as always.

Volatile Memory
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re: The evolution of phase-change memory
Volatile Memory   7/28/2010 5:08:29 AM
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patrick.mannion: Why should we take it easy on Mr. Atwood? He is ruining Micron's reputation. The article, as published, leaves the false impression that Micron will engage in the same phase-change memory scam that Numonyx/STM/Intel have been perpetrating for years. Mr. Atwood managed to fool at least one member of the EETimes team, Mr. Peter Clarke, who after reading Mr. Atwood's outdated article, concluded that "Micron ... has indicated that it intends to back the phase-change memory technology" - clearly an unwarranted conclusion, if the article was submitted prior to the closing of the acquisition!

patrick.mannion
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re: The evolution of phase-change memory
patrick.mannion   7/29/2010 8:28:29 PM
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Hi again. The article was originally submitted by Numonyx prior to the finalization of the acquisition. It entered the queue here (we get a lot of submissions). When it came time to post it, the acquistion had closed and we sent the article back for revision, with Micron. The version you see now, is the version Micron sent back to us.

ahshabazz
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re: The evolution of phase-change memory
ahshabazz   7/30/2010 6:44:01 AM
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Our memories dont rely on electronics our memories use dark energy - :}

photo recovery
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re: The evolution of phase-change memory
photo recovery   7/30/2010 8:35:54 AM
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The technology is indeed a productivity booster, and there are easy solutions to privacy issues. Phase-change memory blends the attributes commonly associated with NOR-type flash memory, Regards, Data Recovery Software http://www.datadoctor.biz

Helicopter
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re: The evolution of phase-change memory
Helicopter   8/3/2010 5:33:00 AM
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I thought PCM write speed is less than 10MBps... But if the argument is PCM write speed is 100MBps, then NOR could also be architected to achieve the same.

unknown multiplier
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re: The evolution of phase-change memory
unknown multiplier   8/3/2010 8:28:50 AM
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They cannot be doing block writes, only individual cells.

olearydq
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re: The evolution of phase-change memory
olearydq   7/10/2012 3:48:34 PM
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Figure 2 appears to contain errors in the "Properties" column. The amorphous phase should exhibit low reflectivity and high resistance The polycrystalline phase should exhibit high reflectivity and low resistance. The text and caption state this also. Regards, Daniel O'Leary Fort Worth TX.

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