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PCM Progress Report No. 6: Afterthoughts, part II

1/20/2012 04:40 PM EST
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R G.Neale
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re: PCM Progress Report No. 6: Afterthoughts, part II
R G.Neale   2/22/2012 11:32:31 PM
rbtbob- A winner, if you qualify that claim with an acknowledgment that the 10E9 w/e results appear to be for one device. In addition neither of us have the elevated temperature data retention results and furthermore there may be scaling problems when you rely on thermally insulating layers to make the structure work. In IBM's other (Golden Composition) paper they provided the set/reset resistance distribution with w/e lifetime for a large number of devices. In my figure 4(f) I have provided the general form of that distribution. It would appear from their other curves, the distribution for the 10E9 device would have shown as half a decade for the low resistance state. The point I was trying to make later in the article was in the past there have been many single PCM device claims for greater than 10E9 write/erase cycles that have amounted to nothing by way of commercial products. That is why in Part 2 I produced the list of what I consider are essential requirements for reporting PCM write/erase lifetimes and why it is essential to understand the underlying cause of the different forms of the write/erase resistance curves. Is it a memristor? I guess from what I have read elsewhere in EETimes, it is a matter of what you want to include in your definition. If the memristor requires a forming step before normal operation, that differs from normal operation then for there to be any future for the device memristor research/development will require a solution, my suggestion would be a two stage deposition of the active material. In the case of PCM the need for a forming step was negated by fabricating the device with the chalcogenide in the crystallized state.

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re: PCM Progress Report No. 6: Afterthoughts, part II
rbtbob   2/22/2012 9:43:26 PM
"that the device with the confined bottom electrode was still operating at 109 cycles" c1- we have a winner! "Both devices had signs of what might be considered “forming” during the first 10 or so write/erase cycles" c2- so it is a memristor?

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