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PCM Progress Report No. 7: A view of Samsung's 8-Gb array

4/30/2012 05:59 PM EDT
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bingdao
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re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
bingdao   6/4/2012 7:38:42 AM
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I am your fans and I like your article very much! This is really something that PCM guys should focus and solve. Recently, I kind of read that Hynix also published some paper showing 1GB PCM. Did you hear that? What do you think of it?

R G.Neale
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re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
R G.Neale   5/4/2012 9:22:51 AM
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Conroe-This was provided in the Micron Q2 2012 conference call for analysts to discuss earnings. Part of the quote that I have reads “….as well as our 20-nanometer DRAM node. We also made progress scaling up to 300-millimeter substrates on our 45-nanometer NOR process and in developing a new 300-millimeter phase-change memory process. Moving forward, we look to deploy both of these new 300-millimeter NOR and phase-change processes in the manufacturing fabs over the next year….” What would have been more interesting is to hear more on the type of PCM device (bit capacity etc.) they plan to use the process for and the timing for a fully qualified device. As IBM state they are reviewing seven technologies for the SKA perhaps a PCM device from Micron will be in that mix. In my original piece as submitted I characterized this as Micron’s much needed good news message, as the rest of the their news at the time was not so good. The reviewers and editor decided it was not part of my technical brief and did their job.

conroe
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re: PCM Progress Report No. 7: A view of Samsung's 8-Gb array
conroe   5/4/2012 3:17:08 AM
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Neale this was a very nice analysis of the Sumsung paper. You mention that "Micron recently issued a statement that it has developed a new PCM process that it plans to deploy sometime this year". Is there more information on this anywhere?

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