Breaking News
Design How-To

Extended scalability of perpendicular STT-MRAM towards sub-20-nm MTJ node

Switching current and thermal stability of 17-nm MTJ cell
NO RATINGS
< Previous Page 2 / 2
More Related Links
View Comments: Newest First | Oldest First | Threaded View
resistion
User Rank
CEO
20 nm 6F^2?
resistion   1/28/2014 10:37:17 AM
NO RATINGS
Would a 6F^2 20 nm transistor be able to drive the perpendicular STT-MRAM?

resistion
User Rank
CEO
re: Extended scalability of perpendicular STT-MRAM towards sub-20-nm MTJ node
resistion   2/12/2013 3:00:09 PM
NO RATINGS
I think if you read an STT cell for a minute it would be disturbed. It's because read current is about a third of write current.

unknown multiplier
User Rank
Rookie
re: Extended scalability of perpendicular STT-MRAM towards sub-20-nm MTJ node
unknown multiplier   12/18/2012 3:35:56 AM
NO RATINGS
RA is too low for any foundry to support with their transistor.

resistion
User Rank
CEO
re: Extended scalability of perpendicular STT-MRAM towards sub-20-nm MTJ node
resistion   7/25/2012 1:35:08 AM
NO RATINGS
This could be the reason PCM no longer hyped by Samsung.

Most Recent Comments
Flash Poll
Radio
LATEST ARCHIVED BROADCAST
Join our online Radio Show on Friday 11th July starting at 2:00pm Eastern, when EETimes editor of all things fun and interesting, Max Maxfield, and embedded systems expert, Jack Ganssle, will debate as to just what is, and is not, and embedded system.
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Top Comments of the Week