LONDON – SK Hynix Inc. has introduced a family of DDR3 DRAMs for mobile applications with memory capacities of up to 8-Mbit and reduced standby power consumption when compared with previous memories.
The memories, of 2-Mbit, and 4–Mbit and 8-Mbit capacity, are manufactured using a 20-nm class manufacturing process technology, which usually is taken to mean somwhere between 20-nm and 29-nm minimum geometry.
This DDR3L-RS product reduces standby power consumption by 70 percent compared to existing DDR3L DRAM while it maintains DDR3L performance, according to SK Hynix. DDR3L DRAM operates at 1.35-V, while DDR3 DRAM does at 1.5V. Memory modules (SO-DIMM Small Outline Dual Inline Memory Module) are also provided with densities of 2-Gbyte, 4-Gbyte and 8-Gbyte capacity.
SK Hynix said it expects DDR3L-RS memories to be specified for Ultrabook and tablet computers.
The proportion of the ultrathin shipments in the laptop market is expected to be 11 percent in 2012 and 39 percent in 2014 and 52 percent in 2015, said SK Hynix referencing market research firm IHS-iSuppli as its source.
David Patterson, known for his pioneering research that led to RAID, clusters and more, is part of a team at UC Berkeley that recently made its RISC-V processor architecture an open source hardware offering. We talk with Patterson and one of his colleagues behind the effort about the opportunities they see, what new kinds of designs they hope to enable and what it means for today’s commercial processor giants such as Intel, ARM and Imagination Technologies.