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FinFET structure design and variability analysis enabled by TCAD

Geometric considerations in FinFETs
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Adele.Hars
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re: FinFET structure design and variability analysis enabled by TCAD
Adele.Hars   10/12/2012 12:26:26 PM
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Hmm. In a presentation at the SOI Conference last week, IBM painted a very different picture. It would be interesting to get their take here.

Victor Moroz
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re: FinFET structure design and variability analysis enabled by TCAD
Victor Moroz   10/11/2012 4:49:54 PM
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Adele, the industry is making bulk FinFETs due to the lower cost. There are no serious advantages in SOI FinFETs as long as you can keep consistent fin height in bulk FinFETs, and it was reported to be +-1nm at VLSI Technology conference this year. The channel-stop doping is below the fin channel and has a negligible impact on the overall variability.

Adele.Hars
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re: FinFET structure design and variability analysis enabled by TCAD
Adele.Hars   10/11/2012 2:51:56 PM
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Victor, have you looked at FinFET on SOI? Re: fin shape, the GSS guys (and others) are saying FinFETs would be better for power, perf & mfg on SOI (see http://www.advancedsubstratenews.com/2012/08/power-performance-gss-sees-soi-advantages-for-finfets/ ) And with respect to variability, with an SOI FinFET, you don't dope, so you don't have the RDF problem. Modeling guru Jerry Fossum very eloquently explained it a five (!) years ago (see http://www.advancedsubstratenews.com/2007/05/a-perspective-on-multi-gate-mosfets/ ). Your thoughts?

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