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Everspin samples 64-Mb spin-torque MRAM

11/12/2012 02:01 PM EST
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resistion
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re: Everspin samples 64-Mb spin-torque MRAM
resistion   11/12/2012 4:42:44 PM
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If read long enough, the read current spin torque could flip the bit, no?

Solster
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re: Everspin samples 64-Mb spin-torque MRAM
Solster   11/13/2012 2:31:01 AM
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I thought the read current is spin-unpolarized, sensing the resistance - while the write current is spin-polarized, setting the resistance. If that is indeed the case then read-disturb should not be a problem...

resistion
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re: Everspin samples 64-Mb spin-torque MRAM
resistion   11/13/2012 5:55:44 AM
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I thought current had to go through a spin polarizing layer?

Steffen Hellmold
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re: Everspin samples 64-Mb spin-torque MRAM
Steffen Hellmold   11/13/2012 7:09:40 PM
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While there is a potential for disturb when applying high voltages of either polarity across the bit the circuitry needs to be carefully designed to avoid this problem...

Steffen Hellmold
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re: Everspin samples 64-Mb spin-torque MRAM
Steffen Hellmold   11/13/2012 7:10:34 PM
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See previous comment to addressing this question.

Steffen Hellmold
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re: Everspin samples 64-Mb spin-torque MRAM
Steffen Hellmold   11/13/2012 7:13:50 PM
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Spin Torque Transfer switches the state of the bit with sufficient voltage of either polarity. See also above comment.

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