LONDON – Specialty foundry Altis Semiconductor SA (Corbeil-Essonnes, France) has made design and manufacturing improvements to the conductive bridging RAM (CBRAM) technology it offers as an embedded nonvolatile memory on 130-nm CMOS
The CBRAM technology, licensed from Adesto Technologies Inc. (Sunnyvale, Calif.), is compatible with the Altis 130nm Low Power Platform, and Altis has been offering it embedded form since the middle of 2012.
Embedded CBRAM combines the flexibility of EEPROM with the density of embedded flash, Altis claims. Altis provides access to the technology via multiproject wafer runs.
"Since our design kit release in June 2012, we have supported several customers' projects with embedded CBRAM. Based on our long-term partnership with Adesto and Altis experience on innovative technology developments, this new generation of eCBRAM is providing major enhancements to address our customer's needs. Our eCBRAM offering will bring a significant technical breakthrough for ultra low power applications," said Pascal Louis, CTO of Altis, in a statement.
"This release, not only demonstrates the low power and high performance features of CBRAM technology but also paves the way for full compatibility with standard manufacturing back-end-of-line flows, including robust data retention through the solder reflow process." said Narbeh Derhacobian, CEO of Adesto, in the same statement.
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