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SanDisk sees no EUV until ReRAM replaces flash

4/5/2013 12:25 PM EDT
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resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/5/2013 4:18:26 PM
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EUV or any other advanced litho would not be needed for 3d RRAM either, if a BICS-like architecture is adapted there as well.

Peter Clarke
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re: SanDisk sees no EUV until ReRAM replaces flash
Peter Clarke   4/5/2013 7:07:11 PM
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I think the implication here is that NAND flash cannot scale below the 1Z-nm node although it can go vertical at the same planar dimensions BUT ReRAM can scale below 10-nm but would need to be deployed in a vertical structure to compete.

resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/7/2013 4:46:49 PM
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I don't know if building 3d structures 10 nm wide or smaller will be cheaper or even preferred practically or electrically. Toshiba's BICS uses ~60 nm wide 3d structures.

Gil Russell
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re: SanDisk sees no EUV until ReRAM replaces flash
Gil Russell   4/5/2013 8:32:32 PM
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Curious that a technology story is fed from a CFO - a new reality first for the industry. Whatever happened to SanDisk's promised introduction in the 2H 2013? And isn't this a question for Toshiba where the real development is being done?

song-chou-1
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re: SanDisk sees no EUV until ReRAM replaces flash
song-chou-1   4/6/2013 3:12:41 AM
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I hear EUV not viable for logic either for at least next 5 years. Real Wafers processing per hour under manufacturing conditions is less than 10 for a ~100€ tool. To overcome shot noise EUV power needs to be significantly above 200W for logic.

jeremybirch
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re: SanDisk sees no EUV until ReRAM replaces flash
jeremybirch   4/9/2013 2:54:56 PM
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The wikipedia article on EUV (http://en.wikipedia.org/wiki/EUV) seems to imply that there are a lot of barriers to it succeeding. Not only is power way too low to get a high throughput (and the efficiency of the light source is shockingly low) but the high energy of the photons induces effects that reduce the sharpness of focus (eg secondary electrons are scattered into the resist hence exposing bits that are meant to be unexposed). It does not sound to me that EUV is viable on this basis. It is also implying that by the time EUV is deployed that even EUV might need double masking, which reduces its appeal still further. Does anyone know more about this?

resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 3:01:41 PM
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At this year's SPIE EUV conference, Zeiss added a couple more concerns regarding the larger angles needed for higher resolution ~10 nm. To compensate by increased demagnification would result in the need to either increase the mask substrate size or stitch together multiple exposures. Last year the shot noise issue was already brought up. Conventional diffraction limit eliminates longer wavelength single patterning, while quantum shot noise eliminates shorter wavelength single patterning (as the minimum dose eventually cooks the resist). Hence DSA was especially popular at this year's SPIE as a possible cheap multi-patterning solution.

resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 3:18:58 PM
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My understanding from talking to someone at the company about why they thought ReRAM needed EUV is that they felt in the high-density array, the ReRAM element would need a selector, i.e., an isolation device like a diode, at every cross-line intersection. This is not so easy to do in the BICS architecture. To make up the cost difference, the diode-based architecture needs to make use of the smallest allowed design rules, much narrower than used for BICS. In turn, this architecture would use fewer levels than BICS. But already some groups are exploring eliminating this isolation device. If one of the approaches works, then the BICS architecture may be applied to the ReRAM.

resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/9/2013 4:54:36 PM
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Even with smaller diodes, I'd still think they would use their 1z process rather than EUV.

Diogenes53
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re: SanDisk sees no EUV until ReRAM replaces flash
Diogenes53   4/9/2013 10:43:10 PM
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EUV, especially for NVM, is a giant head fake, orchestrated principally by Samsung. Their stated corporate strategy has always been to use their overwhelming presence and financial strength to club their competition to death, financially. EUV is, in theory, a perfect manifestation of that strategy. Imagine an NVM fab with, say, 10 EUV tools, at $100M each, running at 50WPH max. NVM is the most elastic of devices, chasing the Nirvana of Harddiskland, and cost is the barrier. The only technology with a chance of enabling NVM to threaten hard disks is imprint. And Toshiba has figured this out.

resistion
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re: SanDisk sees no EUV until ReRAM replaces flash
resistion   4/10/2013 2:20:44 AM
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HDD companies been playing well with imprint recently, also recently adding DSA to rotary e-beam for the template fabrication.

double-o-nothing
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re: SanDisk sees no EUV until ReRAM replaces flash
double-o-nothing   4/11/2013 9:00:18 AM
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EUV essentially missed the window. To go to 10 nm and beyond, EUV is not any better than 193i.

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