LONDON – Leading chip manufacturer Samsung Electronics Co. Ltd. (Seoul, South Korea) has announced it has begun volume production of a 128-Gbit, 3-bit multi-level cell NAND memory using 10-nm class process technology. Samsung defines 10-nm class to be somewhere between 10-nm and 19-nm.
Samsung claims its chip has the highest physical density and the highest performance as it can move data at 400-Mbits per second using a toggle DDR 2.0 interface. Micron Technology Inc. recently announced a 128-Gbit 3-bit MLC NAND flash memory made using a 20-nm manufacturing process (see Micron launches dense 128-Gbit NAND flash)
Samsung started production of 1X-nm 64-Gbit MLC NAND flash memory in November 2012.
No details of the read or write performance, or the cycling endurance were provided by Samsung in a press release nor did the company provide a part number.
Samsung said it would use the 128-Gbit NAND flash memory to expand its supply of 128-Gbyte memory cards and to increase its production of solid-state drives with densities above 500-Gbyte for use in computers.
"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market," said Young-Hyun Jun, an executive vice president of memory sales & marketing at Samsung, in a statement.
Related links and articles:
Micron launches dense 128-Gbit NAND flash
Samsung takes NAND memory below 20-nm
Hynix overtakes Micron in NAND flash ranking
Toshiba cuts NAND production by 30 percent