LONDON – Samsung Electronics Co. Ltd. has announced that is has an embedded flash memory capability ready for a 45-nm logic manufacturing process.
The company said that an initial test chip had shown that the process has past stringent quality requirements and that the 45-nm process would be offered for commercial manufacture of smartcard ICs in the second half of 2014.
The manufacturing process also has scope for deployment in NFC ICs, embedded secure elements and trusted platform modules, Samsung said
The 45-nm eFlash process is specified to provide 1 million read-write cycling endurance as well as a read memory that is 50 percent faster and the power efficiency that is 25 percent reduced compared with rpoducts built on Samsung's 80nm eFlash logic process. Samsung's advanced 45nm eFlash logic technology will also be offered to its foundry and ASIC customers, Samsung said.
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