EINDHOVEN, Netherlands – NXP Semiconductors N.V. has announced a
range of dual Power-SO8 MOSFETs with an eye toward automotive
applications such as fuel injection, ABS and stability control.
The LFPAK56D portfolio is AEC-Q101 qualified claims a
77 percent smaller footprint than the equivalent DPAK
solution which typically requires two devices.
LFPAK56D combines two fully isolated MOSFETs into a single package
designed to meet the rigorous requirements of the automotive
industry. With the industry’s widest range of RDSon
values across five voltage grades, it provides the best
performance, current handling and reliability on the market. This
new range of dual Power-SO8 MOSFETs offers customers complete
flexibility and freedom to pick the device that best matches the
application and module requirements, while also achieving a much
higher power density.
Designing with LFPAK56D lowers costs through simpler PCB
assembly, ease of inspection and shrinking module size.
Smaller modules also means a significant saving in weight,
which is particularly attractive to manufacturers focused on
reducing CO2 emissions.
Building on NXP’s expertise in LFPAK56, which was the first
power-SO8 package on the market fully qualified to AEC-Q101,
NXP is now introducing the same reliable ”copper clip” bonding
technology to dual Power-SO8 MOSFETs in LFPAK56D. This copper
clip technology is what gives the package its advantage in low
package resistance, inductance and high maximum ID
- Dual Power-SO8 MOSFET
- 77% smaller footprint than the equivalent DPAK solution
- Copper clip technology - Wire bond free
- High maximum ID rating
- Low package resistance and inductance
- Low thermal resistance
- High current transient robustness
- Automotive AEC-Q101 qualified to 175°C
The LFPAK56D range is in
and is available immediately.