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Winbondís innovative DRAM design and the legacy of Qimonda

8/12/2010 07:48 PM EDT
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double-o-nothing
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re: Winbondís innovative DRAM design and the legacy of Qimonda
double-o-nothing   8/18/2010 4:54:31 AM
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At 6X nm it's easy to go from 6F^2 to 4F^2, but not at 4X nm or below. Also, the word line is likely edge-placed so that the channel current is vertical. The gate length trades off word line resistance vs. transistor speed and current.

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