SAN JOSE, CALIF. Hitachi Semiconductor (America) Inc. has launched memory devices and modules based on Rambus technology.
A 144-Mbit (8 Mbits x 18) Direct Rambus DRAM chip, built with a 0.18-micron process, is claimed to be suitable for ECC (error check-ing and correction) applications and is offered in three speeds: 300, 356 and 400 MHz, with double-data-rate I/O equal to 600, 712 and 800 Mbits/second, respectively, according to the company.
Hitachi's 144-Mbyte (64 Mbits x 18) and 288-Mbyte (128 Mbits x 18) Rambus in-line memory modules (RIMMs) provide peak bandwidth of up to 1.6 Gbytes/s.
The company's 144-Mbit (256k words x 32 banks x 18 bits) Direct RDRAM in a 54-pin ball-grid array package with an 800-Mbit/s speed (part No. HM5512182FBT) is $110 in 1,000-piece quantities. Samples are scheduled for November, with volume production planned for the first quarter of 2000.
The company is also unveiling a 288-Mbyte (4M words x 32 banks x 18 bits) 184-pin RIMM module with 1.6-Gbyte/s speed. The HB 55A128ARR is $2,200 in 100-piece quantities. Samples are scheduled for December, and production is slated for the first quarter of 2000.
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EETInfo No. 617