Irvine, Calif. Toshiba America Electronic Components Inc. has begun sampling what it said are among the industry's first 16-Mbit asynchronous high-speed SRAMs.
The new product family offers a fourfold increase in density over the 4-Mbit asynchronous SRAM components used today for high-speed data buffers and storage in industrial, networking, telecommunications and tester applications, Toshiba said.
The devices are aimed at applications that use an asynchronous memory interface and require both high speed and large memory density. Toshiba said its device, tucked in a 400-mm, 54-pin thin small-outline package, reduces board space requirements more than 70 percent when compared with designs using four pieces of 4-Mbit SRAMs that are packaged in 400-mm 44-pin TSOPs.
The 16-Mbit SRAMs are available in speed grades of 10, 12 and 15 nanoseconds. Configurations include 1 Mbit x 16 (TC55V16100FT), 2 Mbits x 8 (TC55V8200FT), 4 Mbits x 4 (TC55V4400FT) and 16 Mbits x 1 (TC55V11601FT). The SRAMs are fabricated on a 0.25-micron CMOS process. Samples are available now, priced from $140 for the 15-ns device. Production quantities of all three speed grades will be available in the fourth quarter.
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EETInfo No. 615