SAN JOSE, CALIF. Hitachi Semiconductor (America) Inc. has introduced the HD155131TF for transmit/receive signal processing in digital cellular systems, personal communications networks and other mobile communications systems.
The single-chip device is manufactured in a 0.35-micron BiCMOS process and is the first part from Hitachi to use silicon-on-insulator (SOI) technology. It features an operating voltage range of 2.7 to 3.3 V, a 98-dB dynamic range and current dissipation of 45 mA in transmit, 60 mA in receive and 1 mA or less in power-save mode. It supports GSM-PCS (global system for mobile communications/personal cellular system), GSM-900 and DCS-1800/1900 (digital cellular system) standards.
On the transmit side, the device is said to reduce out-of-band noise with an offset phase-locked-loop (PLL) system. It's done away with the surface acoustic wave (SAW) filter and duplexer (wave divider) normally required in the antenna block.
On the receive side, the device IC includes a dual-phase PLL synthesizer and a low-noise amplifier for a dual 900-MHz and 1,800-MHz band use. The voltage-controlled oscillator tuning band is minimized with a double super-heterodyne method that permits selection of flexible frequency plans. The device is packaged in a TQFP-56 and priced at $6 in quantities of 10,000.
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EETInfo No. 608