EL SEGUNDO, CALIF. International Rectifier's first TempSense HEXFET has an on-chip temperature-sensing diode for cost-effective mon-itoring in automotive systems. The IRLBD59N04E is a 40-volt, 20-milliohm n-channel power MOSFET that can deliver 59 amps (at 25 degrees C).
Temperature sensing is provided by two anti-parallel, electrically isolated poly-silicon diodes. The diode's forward voltage falls to approximately 0.4 V with a bias current of 250 microamps when the MOSFET reaches its maximum permitted temperature value. "This voltage feedback can be used with a monitoring circuit to turn the MOSFET off, protecting the application circuit from current overload and excessive temperature," said Gordon Gray, automotive technical marketing manager.
The device meets the Q101 automotive stress test qualification procedure at 175 degrees C, making it suitable for electric power-assist steering, antilock brakes and fuel-injection systems, as well as power door locks, window lifts and car audio circuits.
Back-to-back zener di-odes protect the device's gate-to-source path from electrostatic discharge up to 2,000 V.
The device can be configured to work with existing microcontrollers with minimum circuit design, providing a simple and cost-effective alternative to more-complex and expensive intelligent power switches.
Samples are available immediately, with full production scheduled for July.
Pricing will be 80 cents each in quantities of 10,000.
CALL (310) 252-7105
EETInfo No. 621