LEXINGTON, MASS. - STMicroelectronics' newest family of gold-metallized n-channel MOSFET RF power transistors offer what the company says is substantially enhanced ruggedness for MRI and plasma-discharge applications where severe load mismatches can occur. The devices are rated from 5 watts at 28 volts to 300 W at 50 V.
The first three models in the SD29xx series (SD2900, SD2931-10 and SD2933) have reduced capacitance and improved gain, which makes them suitable for a wide range of HF, VHF and UHF applications including FM radio, TV, military communications and radar, according to the company.
The series incorporates what STMicroelectronics calls a number of innovative process developments to control the parasitic characteristics inherent in DMOS devices. Reliability of the SD2931-10 and SD2933 is enhanced by special packaging that is mechanically compatible with conventional packages, but with a modified design that cuts thermal resistance by 25 percent and increases mean time between failures by a factor of four.
The SD29XX series is supported by evaluation boards and applications notes. The family is currently available in quantities of 10,000 pieces, with the SD2900 (5 W at 28 V, to 500 MHz, 13.5-dB gain at 400 MHz) listed at $12. The SD2931-10 (150 W, to 230 MHz, 14-dB gain at 175 MHz) is priced at $36, and the SD2933 (300 W minimum, to 150 MHz, with 20-dB gain at 30 MHz), $65.
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EETInfo No. 622