Colorado Springs, Colo. -Ramtron International Corp. is sampling a 3-volt ferroelectric RAM that's said to offer write speeds 280 times faster than those of serial E2PROM, with which it is pin-compatible. The FM24CL16 is the first in a planned line of devices.
The ferroelectric memories-previously available only with 5-volt performance-are also said to exceed 10 billion write cycles, compared with 1 million for E2PROM, and to have no timing delays, compared with a 10-millisecond delay for E2PROM.
Ramtron chief executive officer William Staunton suggested that the low-power FRAM could serve as expansion RAM for low-cost microcontrollers.
Other potential applications include palmtop computers, information appliances, home network gateways, laser printers, electric meters, and telecommunications and networking equipment.
The 16-kbit nonvolatile RAM has an industry-standard two-wire interface and is pin-compatible with industry-standard, 24C16-type E2PROMs. Read and writes are performed at bus speeds of up to 1 MHz.
The Ramtron memory operates from 2.7 volts to 5.5 V. It draws 75 microamps for reads, and it writes at 100 kHz.
The FM24CL16 is said to offer 10 years of data retention and is rated over the industrial temperature range of -40 degrees C to 85 degrees C.
It's housed in an eight-pin small-outline package and is priced from 78 cents each in quantities of 10,000.
Call (719) 481-7000 or 800-545-3726