Sunnyvale, Calif. - Flash memories from Silicon Storage Technology Inc. (SST) are among the first to combine 55-nanosecond read access speed and 1-microamp standby current (typically 10 mA in operation) in a small-sector (128-byte) architecture.
SST modified its 4-kbyte multipurpose flash line to reach the smaller sector in the 29 Series, said Isao Nojima, vice president of the standard-memory product group. PDAs, data pagers and videogames are among the applications targeted. Nojima said most flash solutions have 16-kbyte or larger sector sizes, and those large blocks of memory have to be erased and reprogrammed even when only small changes are needed. Making flash memory more granular improves speed and power, he said.
The initial entry, the 4-Mbit SST29VF040, will be followed by devices of 512 kbits and 1, 2, 8 and 16 Mbits. They will incorporate SST's SuperFlash technology for fast write and erase speeds and will be manufactured on a thin-oxide process that promises endurance of 100,000 cycles.
The 4-Mbit memory, packaged in 32-pin PLCC, 8 x 14-mm TSOP and 32-pin PDIP, is priced at $2.78 in lots of 100,000. Samples are due in May, production quantities in the third quarter.
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EETInfo No. 613