Colorado Springs, Colo. - Ramtron International Corp.'s Enhanced Memory Systems Inc. subsidiary is sampling 72-Mbit no-bus-latency (NoBL) burst enhanced-SRAM devices for SRAM replacement.
Based on a proprietary one-transistor trench DRAM architecture, the ESRAM devices are said to offer high density at a low cost per bit, with low power consumption. They are also said to offer better soft-error performance than high-density, six-transistor SRAMs or embedded SRAMs built on logic-based CMOS processes.
They are available with 2.5- or 3.3-volt power supplies and 100-pin TQFP and 119-pin PBGA packaging options. The 72-Mbit devices are pin-compatible with existing 18-Mbit NoBL or ZBT SRAM products, so multiple SRAMs can be replaced with a single lower-cost, lower-power ESRAM. Samples are priced at $80 each in small quantities.
Call (800) 545-FRAM (3726)