Sunnyvale, Calif. - Fujitsu Microelectronics America Inc.'s MB84SR6H5K5K1 multichip package combines fast-cycle RAM and burst-mode flash memory chips for use in next-generation mobile phones. The package includes one 128-Mbit NOR-type flash memory and two 64-Mbit mobile FCRAMs capable of burst-mode operation at 66 MHz, enabling high-speed data access, Fujitsu said. Burst-mode access time is 11 nanoseconds for flash, 12 ns for mobile FCRAM (at 66 MHz). Operating on 1.8-V power, the flash memory requires a maximum of 10 microamps, the mobile FCRAM a maximum of 120 microamps of standby current. Operating voltage range is 1.65 to 1.95 V; operating temperature range is -30 degrees C to 85 degrees C. In a 115-pin FBGA configuration, the MB84SR6H5K5K1 sells for $50 in small sampling quantities.
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