Toshiba has introduced the industry's first 4Gb single-die, multi-level cell (MLC), NAND flash memory.
Toshiba has introduced the industry's first 4Gb single-die, multi-level cell (MLC), NAND flash memory. Fabricated with 90-nanometer process technology, the chip offers double the capacity of Toshiba's present largest single-die NAND flash memory, and will realize higher capacity flash memory cards capable of supporting a wide range of applications. The 4Gb NAND flash memory enables faster write performance by implementing advanced design concept and adjusting the control system of the memory cell. Samples of the 4Gb NAND flash memory, TC58NVG2D4BFT00, are available from April and mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units. Toshiba also announced an 8Gb NAND flash memory IC (TH58NVG3D4BFT00) that stacks two of the 4Gb NAND flash memories in a single package. Stacking the new 4Gb NAND flash memories in a single TSOP (Thin Small Outline Package) opens the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturization. Further, Toshiba plans to introduce a sample of 16Gb NAND flash memory IC that stacks four of the 4Gb NAND flash memories in a single package in the third quarter of 2004. NAND flash memory offers high density, non-volatile data retention and is widely employed in flash memory cards and as embedded memory in digital consumer products, such as digital still cameras, PDAs, and multifunction cell phones. With the introduction of the new devices, Toshiba's NAND flash memory component line-up will range from 128-megabit to 8Gb (stacked version) devices. The 4Gb NAND flash memory was developed by Toshiba Corporation and SanDisk Corporation, under their 1999 comprehensive agreement on joint development of NAND flash memory. Toshiba Electronics Europe, 40549 D¼sseldorf, Germany.