Automotive 12V boardnet high-side switches and electric motor drives are the target applications for a record-setting family of p-channel MOSFETs announced by Siliconix. The 40V and 60V devices are the first with these breakdown voltage ratings to be built using Vishay's advanced p-channel technology, which reduces MOSFET on-resistance to record-low levels. Maximum RDS(on) ratings range from 15 mOhm down to 4.2.mOhm for six devices. Because p-channel MOSFETs require no additional high-side driver circuitry for turn-on, the new 40V and 60V TrenchFETs will help designers to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions. When used to replace previous-generation p-channel devices, the TrenchFETs give designers the opportunity to lower system power consumption as well. Compared with the next-best p-channel MOSFETs on the market with the same voltage ratings and package outlines, conduction losses for the new devices are reduced by up to 90%. For DPAK and D2PAK devices, maximum junction temperature is 175 C. Siliconix/Vishay Semiconductor GmbH, 74072 Heilbronn, Germany.
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