Automotive 12V boardnet high-side switches and electric motor drives are the target applications for a record-setting family of p-channel MOSFETs announced by Siliconix. The 40V and 60V devices are the first with these breakdown voltage ratings to be built using Vishay's advanced p-channel technology, which reduces MOSFET on-resistance to record-low levels. Maximum RDS(on) ratings range from 15 mOhm down to 4.2.mOhm for six devices. Because p-channel MOSFETs require no additional high-side driver circuitry for turn-on, the new 40V and 60V TrenchFETs will help designers to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions. When used to replace previous-generation p-channel devices, the TrenchFETs give designers the opportunity to lower system power consumption as well. Compared with the next-best p-channel MOSFETs on the market with the same voltage ratings and package outlines, conduction losses for the new devices are reduced by up to 90%. For DPAK and D2PAK devices, maximum junction temperature is 175 C. Siliconix/Vishay Semiconductor GmbH, 74072 Heilbronn, Germany.
David Patterson, known for his pioneering research that led to RAID, clusters and more, is part of a team at UC Berkeley that recently made its RISC-V processor architecture an open source hardware offering. We talk with Patterson and one of his colleagues behind the effort about the opportunities they see, what new kinds of designs they hope to enable and what it means for today’s commercial processor giants such as Intel, ARM and Imagination Technologies.