South Portland, Maine -- Fairchild Semiconductor, a supplier of high performance products that optimize power, announces the RMPA1959, a high performance linear RF Power Amplifier Module (PAM) for CDMA and CDMA2000-1X personal communications system (PCS) applications. The RMPA1959 features single positive-supply operation, low power and shutdown modes, 39% CDMA efficiency at +28-dBm average output power, in a compact 4 x 4 mm package. The linear power amplifier's low power consumption and excellent linearity are the result of Fairchild's proprietary InGaP Heterojunction Bipolar Transistor (HBT) technology. The two-stage power amplifier internally matches both the input and output to 50 Ohms to minimize the use of external components, simplifies design and features high/low power modes to reduce current consumption during peak phone usage.
Key features and specifications of the RMPA1959 linear power amp include:
* Meets CDMA2000-1XRTT performance requirements
* Compact 4 x 4 x 1.5 mm LCC package with industry-standard pinouts
* Internally matched 50 Ohm and DC-blocked RF input and output to reduce need for external components
* High/low power modes to optimize battery talk time.
Fairchild offers an extensive portfolio of high-volume components for the wireless communications industry, including HBT and pHEMT GaAs MMICs, transmit modules and components for handsets, WLAN systems, wireless base stations, data communications systems, and millimeter wave systems.
The price (each, in 100,000 pcs) is $1.07 and is available now. Delivery is 8 weeks ARO.
For more information about this product, go to: RMPA 1959 power amp module.